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Atomically-thin two dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacement of Si, while there have been also increasing interest in the monolithic 3D integration of 2D TMDCs on Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of unique properties of 2DMs such as high current driving capability with low leakage current, non-volatile switching characteristics, large surface-to-volume ratio, and tunable bandgap. The 2D materials group aims to develop world-class 2D TMDC materials technologies and applications with focus on (1) Wafer-scale growth of electronic-grade TMDCs, (2) Wafer-scale van der Waals (vdW) layer transfer of TMDCs, and (3) 2D TMDC based memristors/ memtransistors for in-memory computing and neuromorphic applications.

• Chemical vapor deposition (CVD) reactor for 2D growth (left)
  
• 2D monolayer MoS2 grown on 2 inch sapphire wafer and material/physical characterization results of the film (right)

• Physical vapor deposition (PVD) sputter for 2D growth (top-left)
• 2D few-layer PVD MoS2 grown on 6 inch SiO2/Si wafer
• Raman, XTEM, HTEM characterization (bottom)

• 2D CVD-MoS2 memtransistor crossbar arrays for in-memory computing